Engineering topics
Publications and source records attributed to Nichols, D. K..
A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.
A seventh set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications. SEE trends are indicated for several functional classes of ICs.
The state of understanding of the destructive SEGR event in power MOSFETs is relatively mature with large published efforts, both experimental and theoretical. However, gasps remain in the uderstanding of the phenomenon, including unexplained anomalies, emperical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effets.
This paper discusses single-event upset effets in flash memories, using heavy ions at the Texas A&M cyclotron. Initial results are presented for one manufacturer that compare uspet in the individual memory elemts with the more complex funtion failure modes that occur in the internal state machine and its control registers. This device is designed to function with either 5-V or 3.3-V power supply levels for read operations, but requires an additional 5 or 12-V power supply for write and erase operations.
This paper presents a display of heavy-ion and proton-induced single event transients for selected linear devices. The transient vital signs are serious; low LET threshold, high voltage amplitude and extended pulse duration (microsecs.).
The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.
JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.
The authors collected a set of heavy-ion single event upset (SEU) test data since their last publication in December, 1985. Trends in SEU susceptibility for state-of-the-art parts are presented.
The observance of latchup in CMOS/epi devices upon exposure to krypton ions is reported. The effect of epi layer thickness on latchup susceptibility is discussed. An approach to eliminating this effect is indicated.
Heavy secondary ions do not significantly alter device responses. Conclusion that external reaction products cause no significant alteration of single-event-upset response based on comparison of data obtained from both lidded and unlidded devices and for proton beams impinging at angles ranging from 0 degrees to 180 degrees with respect to chip face. Study also found single-event-upset cross section increases only modestly as proton energy increased to 590 MeV, characteristic of maximum energies expected in belts of trapped protons surrounding Earth and Jupiter.
New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.
Paper presents recent results of continuing program for increasing resistance of integrated circuits to single-event upset (SEU). Results based on study of test data for heavy-ion SEU in more than 180 different types of devices. (Some devices perform identical functions but made by different processes.) Program also examines developments in mathematical models for SEU.
Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.
Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.
Document summarizes 15 studies of single-event upsets covering 60 different types of semiconductor devices. Studies discussed in document include verification of basic reactions induced by heavy ions and protons and surveys of latchup and bit-flip susceptibility of several types of devices and device-fabrication technologies.
New test data have been combined with published data to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. These data have been arranged to exibit the SEU susceptibility of devices by function, technology, and manufacturer. Clear trends emerge which should be useful in predicting future device performance.
Tests showed that bipolar chips in the attitude control computer of the Galileo spacecraft would likely cause catastrophic mission failure due to single particle upset. This paper describes the design and testing of CMOS replacements which are speed compatible with the bipolar parts and are immune to upset by 165-MeV krypton ions.
Sensitivity to ion beams is studied. Latchup effect subject of paper presenting results of testing 19 types of complementary metal-oxide semiconductor (CMOS) chips from six manufacturers. Report gives details of sensitivity of chips to latchup caused by argon and krypton ion beams. Identifies parasitic npnp paths and proides latchup cross section and qualitative explanation of latchup sensitivity for each chip type.