NASA NTRS · 19820000239
Tests on Double Layer Metalization
Abstract
28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.
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Woo, D. S.. 1983-03-01. Tests on Double Layer Metalization. https://ntrs.nasa.gov/citations/19820000239
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