Heat flow control and segregation in directional solidification

Abstract

Optimization of the vertical Bridgman technique for growth of electronic materials in single crystal form was investigated. The limitations of the crystal growth configuration were experimentally determined and heat transfer related deficiencies identified. Design of an alternate system was based on the use of heat pipes separated by a gradient region. Heat transfer analyses based on one and two dimensional models indicated the necessity of a flexible gradient zone configuration. Directional melting of binary systems as encountered during seeding in melt growth was analysed for concurrent compositional changes at the crystal-metal interface, and the theoretical treatment numerically applied to HgCdTe and Ga doped germanium. A theoretical and experimental study of the thermal effects associated with current flow was conducted. It was found that experimental measurements of dc induced growth during crystal pulling can be used for the precise determination of the Peltier coefficient.