Engineering topics

Witt, A. F.

Publications and source records attributed to Witt, A. F..

At least 19 records

NASA NTRS2001

ISS-Crystal Growth of Photorefractive Materials (BSO): Critical Design Issues for Optimized Data Extraction from Space Experiments

Realization of the full potential of photorefractive materials in device technology is seriously impeded by our inability to achieve controlled formation of critical defects during single crystal growth and by difficulties in meeting the required degree of compositional uniformity on a micro-scale over macroscopic dimensions. The exact nature and origin of the critical defects which control photorefractivity could not as yet be identified because of gravitational interference. There exists, however, strong evidence that the density of defect formation and their spatial distribution are adversely affected by gravitational interference which precludes the establishment of quantifiable and controllable heat and mass transfer conditions during crystal growth. The current, NASA sponsored research at MIT is directed at establishing a basis for the development of a comprehensive approach to the optimization of property control during melt growth of photorefractive materials, making use of the m-g environment, provided in the International Space Station. The objectives to be pursued in m-g research on photorefractive BSO (Bi12SiO20) are: (a) identification of the x-level(s) responsible for photorefractivity in undoped BSO; (b) development of approaches leading to the control of x-level formation at uniform spatial distribution; (c) development of doping and processing procedures for optimization of the critical, application specific parameters, spectral response, sensitivity, response time and matrix stability. The presentation will focus on: the rationale for the justification of the space experiment, ground-based development efforts, design considerations for the space experiments, strategic plan of the space experiments, and approaches to the quantitative analysis of the space experiments.

Hyers, Robert W.↗

NASA NTRS1999

Identification and Control of Gravity Related Defect Formation During Melt Growth of Bismuth-Silicate (Bi12SiO20)

In the light of strong indications that a majority of critical defects formed in bismuth silicon oxide (BSO) during growth from the melt is related directly or indirectly to gravitational interference, it is suggested to use the reduced gravity environment of outer space for experimentation directed at the identification and control of these defects. The results of these experiments are expected to lead to advances in our understanding of crystal growth related defect formation in general and will establish a basis for effective defect engineering, the approach to efficient achievement of defect related, application specific properties in opto-electronic materials

Zheng, Y.↗

NASA NTRS1992

Quantitative analysis of the effects of vertical magnetic fields on microsegregation in Te-doped LEC GaAs

Using near-IR transmission microscopy with computational absorption analysis, the effects of axial magnetic fields on micro- and macrosegregation during LP-LEC growth of GaAs were quantitatively investigated with a spatial resolution approaching 2 microns. Segregation inhomogeneities exceeding one order of magnitude are found to be related to fluid dynamics of the melt. The applicability of the BPS theory as well as the nonapplicability of the Cochran analysis are established.

Carlson, D. J.↗

NASA NTRS1992

Real time thermal imaging for analysis and control of crystal growth by the Czochralski technique

A real time thermal imaging system with temperature resolution better than +/- 0.5 C and spatial resolution of better than 0.5 mm has been developed. It has been applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski growth configurations. The sensor can provide single/multiple point thermal information; a multi-pixel averaging algorithm has been developed which permits localized, low noise sensing and display of optical intensity variations at any location in the hot zone as a function of time. Temperature distributions are measured by extraction of data along a user selectable linear pixel array and are simultaneously displayed, as a graphic overlay, on the thermal image.

Wargo, M. J.↗

NASA NTRS1991

Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy

An optical method is described for identifying dislocation etch pits in n-type GaAS, using near-IR brightfield transmission microscopy. Dislocations are revealed in a nondestructive manner through contrasts that are likely due to impurity decoration of the dislocation lines. By subjecting the same wafers to a photoetching technique, it was established that each etch pit on the surface is associated with a dislocation and that the termination of each (decorated) dislocation is an etch pit.

Cao, X. Z.↗

NASA NTRS1991

New optical approaches to the quantitative characterization of crystal growth, segregation and defect formation

Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.

Carlson, D. J.↗

NASA NTRS1988

Electronic materials processing and the microgravity environment

The nature and origin of deficiencies in bulk electronic materials for device fabrication are analyzed. It is found that gravity generated perturbations during their formation account largely for the introduction of critical chemical and crystalline defects and, moreover, are responsible for the still existing gap between theory and experiment and thus for excessive reliance on proprietary empiricism in processing technology. Exploration of the potential of reduced gravity environment for electronic materials processing is found to be not only desirable but mandatory.

Witt, A. F.↗

NASA NTRS1986

Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment

Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research.

Witt, A. F.↗

NASA NTRS1986

Opportunity for academic research in a low-gravity environment - Crystal growth

The history of basic and applied research on crystal growth (CG), especially of semiconductor materials, is reviewed, stressing the dominance (at least in the U.S.) of industrial R&D projects over academic programs and the need for more extensive fundamental investigations. The NASA microgravity research program and the recommendations of the University Space Research Association are examined as they affect the availability of space facilities for academic CG research. Also included is a report on ground experiments on the effectiveness of magnetic fields in controlling vertical Bridgman CG and melt stability, using the apparatus employed in the Apollo-Soyuz experiments (Witt et al., 1978); the results are presented in graphs and briefly characterized. The role of NASA's microgravity CG program in stimulating academic work on CG, the importance of convection effects, CG work on materials other than semiconductors, and NSF support of CG research are discussed in a comment by R. F. Sekerka.

Matthiesen, D. H.↗

NASA NTRS1985

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.

Witt, A. F.↗

NASA NTRS1985

Solutal Convection and Its Effects on Crystal Growth and Segregation in Binary and Pseudo-Binary System with Large Liquidus-Solidus Separation

This research program is composed of theoretical and experimental studies of solutal convection and its effects on crystal growth and segregation in binary and pseudo-binary systems with large liquidus-solidus separation. The theoretical program has resulted in the development of a transient simulation of the growth of concentrated alloys in microgravity and has been used to study the dynamics of GeSi, PbSnTe, HgCdTe growth. Finite element analysis has also been developed for studying the interactions of buoyancy-driven convection in the melt caused by temperature and concentration variations with melt-solid interface morphology and alloy segregation in the grown crystal. These calculations are being compared directly to experimental measurements of segregation and interface shape for GeSi growth and GaGe growth. The results for SiGe indicate that careful design of the thermal system can result in almost diffusion-controlled growth on Earth because of the stablizing influence of the concentration gradient ahead of the solidification front.

Brown, R. A.↗

NASA NTRS1985

Heat Flow and Segregation in Directional Solidification

This research is composed of three major components: (1) development of interface morphology control for automated Bridgman growth of semiconductor systems; (2) comparative analysis of segregation during crystal growth in a reduced gravity environment and in the presence of magnetic fields; and (3) consequences of seeding by meltback in Bridgman growth under reduced gravity conditions. In attempts to optimize furnace design for crystal growth in a reduced gravity environment, an analytical approach to heat transfer was developed. It was thus found that charge confining crucibles diminish the ability to control the growth interface morphology through its position within the gradient zone. A heat pipe hot zone system for Bridgman growth, in reduced gravity environment, of crystal with diameters up to 16 mm was developed. For growth of Ga-doped germanium in the multipurpose (ASTP) furnace, it was found that the application of transverse magnetic fields (up to 36 kg) does not substantially increase the effective distribution coefficient; i.e., diffusion-controlled segregation observed in reduced gravity environment cannot be reached nor approached by magnetic field induced melt stabilization.

Witt, A. F.↗

NASA NTRS1983

The impact of space research on semiconductor crystal growth technology

Crystal growth experiments in reduced gravity environment and related ground-based research have contributed significantly to the establishment of a scientific basis for semiconductor growth from the melt. NASA-sponsored research has been instrumental in the introduction of heat pipes for heat and mass transfer control in crystal growth and in the development of magnetic field induced melt stabilization, approaches primarily responsible for recent advances in crystal growth technology.

Witt, A. F.↗

NASA NTRS1983

Seeded crystal growth of pseudobinary systems with large liquidus-solidus separation

The design and execution of seeded melt growth involving concentrated alloys is strongly dependent on the crystal-melt interface temperature and its change during seeding and growth. Thermodynamic instabilities during the seeding process can be controlled by the choice of the seed and melt composition and by the axial temperature gradient of the growth apparatus. These basic factors controlling seeded melt growth of concentrated alloys are of major importance for planning space experiments.

Bourret, E. D.↗

NASA NTRS1982

Segregation effects during growth of pseudo-binary system with large liquidus-solidus separation

Results are reported for an experimental study of the seeded growth, of PbSnTe single crystals in a vertical Bridgman-Stockbarger (B-S) furnace. Profiles of axial and radial segregation of Sn are presented for crystal growth from melts with aspect ratios of 15 and 6.8; the profiles indicate intense convective mixing. A one-dimensional model of heat and mass transfer in an idealized B-S furnace with diffusion control is used to examine the importance of liquidus-solidus separation in determining growth-rate and composition transients in a pseudobinary system. It is shown that the coupling of heat and mass transfer in a pseudobinary system with a large liquidus-solidus separation causes the transient behavior in a nondilute system to differ markedly from such behavior in a dilute system and that PbSnTe crystals with a reasonable diameter can be grown under nearly convectionless conditions in a microgravity environment.

Bourret, E. D.↗

NASA NTRS1982

Heat flow control and segregation in directional solidification

Optimization of the vertical Bridgman technique for growth of electronic materials in single crystal form was investigated. The limitations of the crystal growth configuration were experimentally determined and heat transfer related deficiencies identified. Design of an alternate system was based on the use of heat pipes separated by a gradient region. Heat transfer analyses based on one and two dimensional models indicated the necessity of a flexible gradient zone configuration. Directional melting of binary systems as encountered during seeding in melt growth was analysed for concurrent compositional changes at the crystal-metal interface, and the theoretical treatment numerically applied to HgCdTe and Ga doped germanium. A theoretical and experimental study of the thermal effects associated with current flow was conducted. It was found that experimental measurements of dc induced growth during crystal pulling can be used for the precise determination of the Peltier coefficient.

Witt, A. F.↗

NASA NTRS1982

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Gatos, H. C.↗

NASA NTRS1982

Segregation during directional melting and its implications on seeded crystal growth: A theoretical analysis

Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for concurrent compositional changes at the crystal-melt interface. It is shown that steady state conditions cannot normally be reached during seeding and that the growth interface temperature at the initial stages of seeded growth is a function of backmelt conditions. The theoretical treatment is numerically applied to Hg1-xCdXTe and Ga-doped Ge.

Bourret, E. D.↗