Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy

Abstract

An optical method is described for identifying dislocation etch pits in n-type GaAS, using near-IR brightfield transmission microscopy. Dislocations are revealed in a nondestructive manner through contrasts that are likely due to impurity decoration of the dislocation lines. By subjecting the same wafers to a photoetching technique, it was established that each etch pit on the surface is associated with a dislocation and that the termination of each (decorated) dislocation is an etch pit.