NASA NTRS · 19830065503
Phase-locked semiconductor laser array with separate contacts
Abstract
A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.
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Katz, J., Kapon, E., Lindsey, C., Margalit, S., Shreter, U., Yariv, A.. 1983-09-15. Phase-locked semiconductor laser array with separate contacts. https://ntrs.nasa.gov/citations/19830065503
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