NASA NTRS · 19840000175
High-Mobility Epitaxial Silicon Wafers
Abstract
New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
Keep this discovery
Explore connections, maps & timelines
Stermer, R. L., Jr, Fripp, A. L., Jr., Jones, A., Mcmullen, J., Manasevit, H., Gergis, I., Soclof, S.. 1985-01-01. High-Mobility Epitaxial Silicon Wafers. https://ntrs.nasa.gov/citations/19840000175
Cite the original work for its findings. Save a collection to share your selection of sources.