Recent advances in LPE GaAs-based solar cells

Abstract

Several modifications were made to an infinite solution liquid phase epitaxy system that help fabricate both GaAs-based cells and thin cells that effectively reduce power-to-weight ratio for space applications. The most important development is the multiwell crucible for multilayer growth. Using a split crucible in one system, as many as five layers were grown in succession with varying Al levels and dopants. The structures grown were used to produce thin GaAs cells only 10 to 20 microns thick and also to grow cascade cell components. Results of these studies are presented and their applications to the future development of GaAs-based cells are discussed.