NASA NTRS · 19840040902
Bubble formation in oxide scales on SiC
Abstract
The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.
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Mieskowski, D. M., Mitchell, T. E., Heuer, A. H.. 1984-01-01. Bubble formation in oxide scales on SiC. https://ntrs.nasa.gov/citations/19840040902
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