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NASA NTRS · 19860000295

Masking Technique for Ion-Beam Sputter Etching

Abstract

Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

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BibTeXRIS

Banks, B. A., Rutledge, S. K.. 1986-05-01. Masking Technique for Ion-Beam Sputter Etching. https://ntrs.nasa.gov/citations/19860000295

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