Search NASASearch

NASA NTRS · 19870000154

Deep, Precise Etching in Semiconductors

Abstract

Semiconductors made to accept precise etching after pretreatment. Combination of material destabilization and anisotropic etching permits formation of precise perpendicular-wall cavities in silicon wafers and other semiconductors. New technique extends capabilities of current micromachining technology to fabrication of submillimeter waveguide arrays and filters. Pre-etching process currently used to fabricate thin-walled arrays of submillimeter waveguides for use as dichroic bandpass filters. Possible applications include integration of sensor probes and processing of circuitry on same silicon chip.

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Shlichta, P. J., Barth, P. W.. 1987-03-01. Deep, Precise Etching in Semiconductors. https://ntrs.nasa.gov/citations/19870000154

Cite the original work for its findings. Save a collection to share your selection of sources.