NASA NTRS · 19870000154
Deep, Precise Etching in Semiconductors
Abstract
Semiconductors made to accept precise etching after pretreatment. Combination of material destabilization and anisotropic etching permits formation of precise perpendicular-wall cavities in silicon wafers and other semiconductors. New technique extends capabilities of current micromachining technology to fabrication of submillimeter waveguide arrays and filters. Pre-etching process currently used to fabricate thin-walled arrays of submillimeter waveguides for use as dichroic bandpass filters. Possible applications include integration of sensor probes and processing of circuitry on same silicon chip.
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Shlichta, P. J., Barth, P. W.. 1987-03-01. Deep, Precise Etching in Semiconductors. https://ntrs.nasa.gov/citations/19870000154
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