NASA NTRS · 19880006239
Further study of inversion layer MOS solar cells
Abstract
A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.
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Ho, Fat Duen. 1987-11-01. Further study of inversion layer MOS solar cells. https://ntrs.nasa.gov/citations/19880006239
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