NASA NTRS · 19890000432
Radiation Damage In Advanced Bipolar Transistors
Abstract
Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.
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Zoutendyk, John A., Goben, Charles A., Berndt, Dale F.. 1989-09-01. Radiation Damage In Advanced Bipolar Transistors. https://ntrs.nasa.gov/citations/19890000432
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