NASA NTRS · 19890000484
Healing Voids In Interconnections In Integrated Circuits
Abstract
Unusual heat treatment heals voids in aluminum interconnections on integrated circuits (IC's). Treatment consists of heating IC to temperature between 200 degrees C and 400 degrees C, holding it at that temperature, and then plunging IC immediately into liquid nitrogen. Typical holding time at evaluated temperature is 30 minutes.
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Cuddihy, Edward F., Lawton, Russell A., Gavin, Thomas. 1989-09-01. Healing Voids In Interconnections In Integrated Circuits. https://ntrs.nasa.gov/citations/19890000484
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