NASA NTRS · 19890000591
Memory Switches Based On MnO2-x Thin Films
Abstract
Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.
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Ramesham, Rajeshuni, Thakoor, Anilkumar P., Lambe, John. 1989-12-01. Memory Switches Based On MnO2-x Thin Films. https://ntrs.nasa.gov/citations/19890000591
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