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NASA NTRS ยท 19900000145

Forward Bias Inhibits Single-Event Upsets

Abstract

Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.

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BibTeXRIS

Zoutendyk, John A.. 1990-04-01. Forward Bias Inhibits Single-Event Upsets. https://ntrs.nasa.gov/citations/19900000145

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