Ga:Ge array development

Abstract

Work at the University of Arizona and at Lawrence Berkeley Laboratory on the development of a far infrared array camera for the Multiband Imaging Photometer on the Space Infrared Telescope Facility (SIRTF) is discussed. The camera design uses stacked linear arrays of Ge:Ga photoconductors to make a full two-dimensional array. Initial results from a 1 x 16 array using a thermally isolated J-FET readout are presented. Dark currents below 300 electrons s(exp -1) and readout noises of 60 electrons were attained. Operation of these types of detectors in an ionizing radiation environment are discussed. Results of radiation testing using both low energy gamma rays and protons are given. Work on advanced C-MOS cascode readouts that promise lower temperature operation and higher levels of performance than the current J-FET based devices is described.