Computer modeling of inversion layer MOS solar cells and arrays

Abstract

A two dimensional numerical model of the inversion layer metal insulator semiconductor (IL/MIS) solar cell is proposed by using the finite element method. The two-dimensional current flow in the device is taken into account in this model. The electrostatic potential distribution, the electron concentration distribution, and the hole concentration distribution for different terminal voltages are simulated. The results of simple calculation are presented. The existing problems for this model are addressed. Future work is proposed. The MIS structures are studied and some of the results are reported.