NASA NTRS · 19920029324
Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon
Abstract
SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.
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Robin, T., Mesarwi, A., Wu, N. J., Fan, W. C., Espoir, L., Ignatiev, A., Sega, R.. 1991-10-28. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon. https://ntrs.nasa.gov/citations/19920029324
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