Engineering topics

Ignatiev, A.

Publications and source records attributed to Ignatiev, A..

17 records

NASA NTRS2018

Lunar Superconducting Magnetic Energy Storage (LSMES)

Superconducting Magnetic Energy Storage (SMES) is an energy storage system that stores electrical energy in the form of a magnetic field by passing direct current through a superconducting coil. The conductor for carrying the current operates at cryogenic temperatures where it becomes a superconductor and thus has virtually no resistive losses as it produces the magnetic field. [1]. The energy can be stored in a persistent mode until required [2]. The main terrestrial challenge for SMES is the need for a cryo-cooling system and the cost associated with its deployment, operation and maintenance. For lunar and planetary exploration, this challenge is totally mitigated using the cold environment of the mission to sustain superconductivity temperatures. The permanently shadowed craters on the moon have regolith temperatures between 50-60K (3), which is the operating temperature for High Temperature Superconducting (HTS) wire. SMES provides several ad-vantages over traditional chemical batteries that: 1) incur much energy loss in extremely cold environments due to power needed for heaters, 2) are inefficient due to their inherent redox and side reactions, and 3) fail over time due to charge/discharge cycling changes in their chemical processes.

Evans, M. E.↗

NASA NTRS2001

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗

NASA NTRS2000

Space Resources Roundtable 2

Contents include following: Developing Technologies for Space Resource Utilization - Concept for a Planetary Engineering Research Institute. Results of a Conceptual Systems Analysis of Systems for 200 m Deep Sampling of the Martian Subsurface. The Role of Near-Earth Asteroids in Long-Term Platinum Supply. Core Drilling for Extra-Terrestrial Mining. Recommendations by the "LSP and Manufacturing" Group to the NSF-NASA Workshop on Autonomous Construction and Manufacturing for Space Electrical Power Systems. Plasma Processing of Lunar and Planetary Materials. Percussive Force Magnitude in Permafrost. Summary of the Issues Regarding the Martian Subsurface Explorer. A Costing Strategy for Manufacturing in Orbit Using Extraterrestrial Resources. Mine Planning for Asteroid Orebodies. Organic-based Dissolution of Silicates: A New Approach to Element Extraction from LunarRegohth. Historic Frontier Processes Active in Future Space-based Mineral Extraction. The Near-Earth Space Surveillance (NIESS) Mission: Discovery, Tracking, and Characterization of Asteroids, Comets, and Artificial Satellites with a microsatellite. Privatized Space Resource Property Ownership. The Fabrication of Silicon Solar Cells on the Moon Using In-Situ Resources. A New Strategy for Exploration Technology Development: The Human Exploration and Development of Space (HEDS) Exploratiori/Commercialization Technology Initiative. Space Resources for Space Tourism. Recovery of Volatiles from the Moon and Associated Issues. Preliminary Analysis of a Small Robot for Martian Regolith Excavation. The Registration of Space-based Property. Continuous Processing with Mars Gases. Drilling and Logging in Space; An Oil-Well Perspective. LORPEX for Power Surges: Drilling, Rock Crushing. An End-To-End Near-Earth Asteroid Resource Exploitation Plan. An Engineering and Cost Model for Human Space Settlement Architectures: Focus on Space Hotels and Moon/Mars Exploration. The Development and Realization of a Silicon-60-based Economy in CisLunar Space. Our Lunar Destiny: Creating a Lunar Economy. Cost-Effective Approaches to Lunar Passenger Transportation. Lunar Mineral Resources: Extraction and Application. Space Resources Development - The Link Between Human Exploration and the Long-term Commercialization of Space. Toward a More Comprehensive Evaluation of Space Information. Development of Metal Casting Molds by Sol-Gel Technology Using Planetary Resources. A New Concept in Planetary Exploration: ISRU with Power Bursts. Bold Space Ventures Require Fervent Public Support. Hot-pressed Iron from Lunar Soil. The Lunar Dust Problem: A Possible Remedy. Considerations on Use of Lunar Regolith in Lunar Constructions. Experimental Study on Water Production by Hydrogen Reduction of Lunar Soil Simulant in a Fixed Bed Reactor.

Ignatiev, A.↗

NASA NTRS1993

Effect of disorder on the optical properties of short period superlattices

The optical properties of disordered short period superlattices are studied using a one-dimensional tight-binding model. A difference vector and disorder structure factor are proposed to characterize the disordered superlattice. The density of states, participation number, and optical absorption coefficients for both ordered and disordered superlattices are calculated as a function of energy. The results show that introduction of disorder into an indirect band gap material enhances the optical transition near the indirect band edge.

Strozier, J. A.↗

NASA NTRS1992

Use of space ultra-vacuum for high quality semiconductor thin film growth

The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.

Ignatiev, A.↗

NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗

NASA NTRS1992

The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

The paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.

Hansen, H. S.↗

NASA NTRS1991

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Robin, T.↗

NASA NTRS1991

Oxygen desorption from YBa2Cu3O(7-x) and Bi2CaSr2Cu2O(8 + delta) superconductors

Oxygen desorption experiments from YBa2Cu3O(7-x) (YBCO) and Bi2CaSr2Cu2O(8 + delta) (BSCCO) superconductors were carried out using a quadrupole mass spectrometer for monitoring the desorbing species and X-ray photoemission spectroscopy for surface characterization. Molecular oxygen was found to desorb from both superconductors following photoirradiation with ultraviolet/optical radiation and subsequent heating at over 150 C. Both YBCO and BSCCO were found to have similar oxygen desorption rates and similar activation energies. The desorption data as well as the X-ray photoemission data indicate that the oxygen desorption is not intrinsic to the superconductors but rather due to molecular oxygen entrapped in the material.

Mesarwi, A.↗

NASA NTRS1991

Space vacuum processing

The unique ultra-vacuum environment of low-earth orbit space is to be utilized for vacuum processing of advanced semiconductor and superconductor materials through epitaxial thin-film growth. The quality of semiconductor single crystal (epitaxial) thin-films can be significantly enhanced in the space ultra-vacuum through the reduction of impurities. This will be accomplished by the development of the free-flying Wake Shield Facility presently being built by the Space Vacuum Epitaxy Center in conjunction with industry and NASA under a low-cost, short time commercial approach to space hardware development.

Ignatiev, A.↗

NASA NTRS1991

A space ultra-vacuum experiment - Application to material processing

An experiment to create and characterize an ultra-vacuum environment in low earth orbit is being developed. A wake region is known to form behind a satellite in low earth orbit. Limited theoretical and experimental results for flowfields around spacecraft are available and a brief discussion of these results is presented. The space experiment package to create an ultra-vacuum condition in the wake region is referred to as the Wake Shield Facility (WSF), manifested for flight on the Space Shuttle in 1993. In the vacuum region, epitaxial thin-films will be processed by molecular and chemical beam epitaxial growth techniques. Various particle flowfield and materials processing considerations for this experiment are presented.

Sega, R. M.↗

NASA NTRS1990

The effect of Sr and Bi on the Si(100) surface oxidation - Auger electron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy study

The effect of Sr and Bi on the oxidation of the Si(100) surface has been studied by Auger electron spectroscopy, low electron diffraction, and X-ray photoelectron spectroscopy. A dramatic enhancement, by a factor of 10, of the Si oxidation has been observed for Si(100) with a Sr overlayer. The SR-enhanced Si oxidation has been studied as a function of O2 exposure and Sr coverage. In contrast to the oxidation promotion of Sr on Si, it has been also observed that a Bi overlayer on Si(100) reduced Si oxidation significantly. Sr adsorption on the Si(100) with a Bi overlayer enhances Si oxidation only at Sr coverage of greater than 0.3 ML.

Fan, W. C.↗

NASA NTRS1990

Oxidation of the Si(100) surface promoted by Sr overlayer - An X-ray photoemission study

The interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.

Mesarwi, A.↗

NASA NTRS1990

Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Wosik, J.↗

NASA NTRS1990

Multiple reflection high-energy electron diffraction beam intensity measurement system

A video-based analysis system for reflection high-energy electron diffraction (RHEED) is described which simultaneously measures the intensities and profiles of multiple diffraction beams. This system is used to record real-time RHEED intensity oscillations for layer-by-layer epitaxial growth. Fast Fourier transform analysis of the oscillation data is used to directly determine the growth rate and to accurately obtain phase information about the oscillations. This system is demonstrated and compared to other methods of recording RHEED oscillation data.

Resh, J. S.↗

NASA NTRS1989

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗

NASA NTRS1988

Photodesorption from stainless steels

The photodesorption by low-energy photons from three types of stainless steels is examined. For all these systems both CO and CO2 were observed to photodesorb with high yields: about 0.001 molecules/photon for CO2 and about 0.0001 molecules/photon for CO at 250 nm. The observed threshold energies were found to be the same for all systems at E0 = 2.92 eV for CO2 and E0 = 2.92-3.10 eV for CO.

Mesarwi, A.↗