NASA NTRS · 19920068367
InGaAs/InGaAsP/InP strained-layer quantum well lasers at about 2 microns
Abstract
The first successful operation of InGaAs strained layer quantum well (Sl-QW) injection lasers at about 2 microns is reported. The threshold current density and the external differential quantum efficiency of 5 microns wide and 800 microns long ridge waveguide lasers were 2.5 kA/sq cm and 6 percent, respectively. The devices had a reverse leakage current of less than 20 micro-A at -1 V indicating epitaxial layers with low defect density.
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Forouhar, S., Ksendzov, A., Larsson, A., Temkin, H.. 1992-07-16. InGaAs/InGaAsP/InP strained-layer quantum well lasers at about 2 microns. https://ntrs.nasa.gov/citations/19920068367
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