NASA NTRS · 19920070530
Enhancing optical absorption in InP and GaAs utilizing profile etching
Abstract
The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed.
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Bailey, Sheila G., Fatemi, Navid S., Landis, Geoffrey A.. 1991-01-01. Enhancing optical absorption in InP and GaAs utilizing profile etching. https://ntrs.nasa.gov/citations/19920070530
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