NASA NTRS · 19930000603
Silicon Holder For Molecular-Beam Epitaxy
Abstract
Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.
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Hoenk, Michael E., Grunthaner, Paula J., Grunthaner, Frank J.. 1993-09-01. Silicon Holder For Molecular-Beam Epitaxy. https://ntrs.nasa.gov/citations/19930000603
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