NASA NTRS · 19930000755
Analyzing Single-Event Gate Ruptures In Power MOSFET's
Abstract
Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.
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Zoutendyk, John A.. 1993-12-01. Analyzing Single-Event Gate Ruptures In Power MOSFET's. https://ntrs.nasa.gov/citations/19930000755
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