NASA NTRS · 19940004327
Integrated CMOS RF amplifier
Abstract
This paper reports an integrated 2.0 micron CMOS RF amplifier designed for amplification in the 420-450 MHz frequency band. Design techniques are shown for the test amplifier configuration. Problems of decreased amplifier bandwidth, gain element instability, and low Q values for the inductors were encountered. Techniques used to overcome these problems are discussed. Layouts of the various elements are described and a summary of the simulation results are included. Test circuits have been submitted to MOSIS for fabrication.
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Charity, C., Whitaker, S., Purviance, J., Canaris, M.. 1990-01-24. Integrated CMOS RF amplifier. https://ntrs.nasa.gov/citations/19940004327
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