NASA NTRS · 19960024408
AIN-Coated Al(2)O(3) Substrates For Electronic Circuits
Abstract
Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.
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Kolawa, Elzbieta, Lowry, Lynn, Herman, Martin, Lee, Karen. 1996-06-01. AIN-Coated Al(2)O(3) Substrates For Electronic Circuits. https://ntrs.nasa.gov/citations/19960024408
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