NASA NTRS · 19970041420
SiC-Based Schottky Diode Gas Sensors
Abstract
Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.
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Hunter, Gary W., Neudeck, Philip G., Chen, Liang-Yu, Knight, Dak, Liu, Chung-Chiun, Wu, Quing-Hai. 1997-10-01. SiC-Based Schottky Diode Gas Sensors. https://ntrs.nasa.gov/citations/19970041420
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