NASA NTRS · 20000054688
An Innovative Method for Preparing Semiconductor Change Used in Crystal Growth and Shear Cell Diffusion Experiments
Abstract
An innovative technique for machining semiconductors has been developed. This technique was used to prepare semiconductor charges for crystal growth and shear cell diffusion experiments. The technique allows brittle semiconductor materials to be quickly and accurately machined. Lightly doping the semiconductor material increases the conductivity enough to allow the material to be shaped by an electrical discharge machine (EDM).
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Anrold, William A., Matthiesen, David, Benett, Robert J., Jayne, Douglas T.. 1997-01-01. An Innovative Method for Preparing Semiconductor Change Used in Crystal Growth and Shear Cell Diffusion Experiments. https://ntrs.nasa.gov/citations/20000054688
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