NASA NTRS · 20020050522
Quantum Mechanical Modeling of Ballistic MOSFETs
Abstract
The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.
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Svizhenko, Alexei, Anantram, M. P., Govindan, T. R., Biegel, Bryan. 2001-01-01. Quantum Mechanical Modeling of Ballistic MOSFETs. https://ntrs.nasa.gov/citations/20020050522
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