NASA NTRS · 20060039427
16 Micrometer Infrared Hot Electron Transistor
Abstract
We have demonstrated a bound to continuum state GaAs/Al_xGa_(1-x)As infrared hot electron transistor which has a peak response at theta_p = 16.3 micrometers. An excellent photo-current transfer ratio of alpha_p = 0.12 and very low dark current transfer ratio of alpha_d = 7.2x10^(-5) is achieved at a temperature of T = 60 K.
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Gunapala, S. D., Liu, J. K., Park, J. S., Lin, T. L.. 1993-09-01. 16 Micrometer Infrared Hot Electron Transistor. https://ntrs.nasa.gov/citations/20060039427
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