NASA NTRS · 20060040210
The contribution of diffusion to device upset cross sections
Abstract
A novel technique incorporating carrier recombination, for determining the charge collection efficiency funcition is presented and applied to a realistic, 3-D, memory device to obtain the upset cross section as a function of LET and orientation of incidence.
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Patterson, J. D., Edmonds, L. D.. 2002-01-01. The contribution of diffusion to device upset cross sections. https://ntrs.nasa.gov/citations/20060040210
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