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Edmonds, L. D.

Publications and source records attributed to Edmonds, L. D..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Fitting a Model to Floating Gate Prompt Charge Loss Test Data for the Samsung 8 Gb SLC NAND Flash Memory

A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.

Edmonds, L. D.↗
NASA NTRS2012

Single Event Rates for Devices Sensitive to Particle Energy

Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.

conservative rate↗
NASA NTRS2002

The contribution of diffusion to device upset cross sections

A novel technique incorporating carrier recombination, for determining the charge collection efficiency funcition is presented and applied to a realistic, 3-D, memory device to obtain the upset cross section as a function of LET and orientation of incidence.

charge collection diffusion SEU↗
NASA NTRS2000

Angular dependence of DRAM upset susceptibility

Heavy ion irradiations of two types of commercial DRAMs reveal unexpected angular responses. One device's cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect.

DRAM angle SEU multiple bit upset DRAM upsets↗
NASA NTRS2000

Angular and Energy Dependence of Proton Upset in Optocouplers

Proton upset effects in optocouplers were reported by LaBel, et al. that showed an unexpected increase in cross section for incident angles above 80 degrees. Although it appeared that the angular dependence was related to direct ionization from protons, the angular dependence was weaker than expected from basic geometrical arguments using a shallow charge collection depth. Later work showed that the angular dependence of proton upset observed in the earlier studies at a single energy could be explained by considering the distribution of proton recoil energies along with the assumption of a deeper charge collection depth, which was consistent with upset tests from heavy ions. However, an experimental test of the underlying assumptions in the latter work has yet to be done. Protons in space not only arrive over a wide range of incident angles, but also involve a distribution of proton energies. It is necessary to understand both the angular dependence and the dependence of proton upset on energy in order to determine how optocouplers will respond in space. If the angular dependence only occurs for extreme angles of incidence, it will have little impact on the overall cross section because of the narrow acceptance angle. The present work examines mechanisms for proton upset in optocouplers in more detail, investigating the energy dependence and the effects of different load conditions. A model for proton upset is developed, along with a laboratory screening method to determine whether direct ionization is significant for specific device types.

Johnston, A. H.↗
NASA NTRS1996

The Influence of Spatial Variations of Diffusion Length on Charge Collected by Diffusion from Ion Tracks

Charge collected by diffusion from ion tracks in a semiconductor substrate may be influenced by the substrate diffusion length, which is related to recombination losses. A theoretical analysis shows that, excluding some extreme cases, charge collection is insensitive to spatial variations in the diffusion length funciton, so it is possible to define an effective diffusion length having the property that collected charge can be approximated by assuming a uniform diffusion length equal to this effective value.

SRAMs epi SRAMs ion tracks charge collection↗
NASA NTRS1992

Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser

A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.

Kim, Q.↗
NASA NTRS1990

Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 microns from the surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).

Zoutendyk, J. A.↗
NASA NTRS1989

Characterization of multiple-bit errors from single-ion tracks in integrated circuits

The spread of charge induced by an ion track in an integrated circuit and its subsequent collection at sensitive nodal junctions can cause multiple-bit errors. The authors have experimentally and analytically investigated this phenomenon using a 256-kb dynamic random-access memory (DRAM). The effects of different charge-transport mechanisms are illustrated, and two classes of ion-track multiple-bit error clusters are identified. It is demonstrated that ion tracks that hit a junction can affect the lateral spread of charge, depending on the nature of the pull-up load on the junction being hit. Ion tracks that do not hit a junction allow the nearly uninhibited lateral spread of charge.

Zoutendyk, J. A.↗