NASA NTRS · 20060042236
Optically Addressed Ferroelectric Memory With Nondestructive Readout
Abstract
This paper describes a new two-capacitor memory cell configuration that provides an enhanced bipolar optoelectric response from the edges of the capacitor at incident power as low as ~ 2mW/micrometer squared.
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Thakoor, S., Thakoor, A.. 1994-01-01. Optically Addressed Ferroelectric Memory With Nondestructive Readout. https://ntrs.nasa.gov/citations/20060042236
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