NASA NTRS · 20060043016
GaN-based micro pressure sensor for extreme environments
Abstract
The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.
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Son, K. -A., Liu, Y., Ruden, P. P., Xie, J., Biyikli, N., Moon, Y. -T., Onojima, N., Morkoc, H.. 2005-10-01. GaN-based micro pressure sensor for extreme environments. https://ntrs.nasa.gov/citations/20060043016
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