Development of GaN-based microchemical sensor nodes

Prokopuk, Nicholas; Son, Kyung-Ah; George, Thomas; Moon, Jeong S.

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NASA NTRS · 20060043148

Development of GaN-based microchemical sensor nodes

Prokopuk, Nicholas·Son, Kyung-Ah·George, Thomas·Moon, Jeong S.

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Abstract

Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

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Prokopuk, Nicholas, Son, Kyung-Ah, George, Thomas, Moon, Jeong S.. 2005-09-01. Development of GaN-based microchemical sensor nodes. https://ntrs.nasa.gov/citations/20060043148

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