NASA NTRS · 20080006956
Compound semi-conductors and controlled doping thereof
Abstract
A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.
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Larkin, David J., Neudeck, Philip G., Powell, J. Anthony, Matus, Lawrence G.. 1998-01-20. Compound semi-conductors and controlled doping thereof. https://ntrs.nasa.gov/citations/20080006956
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