NASA NTRS · 20080012331
Solid-state non-volatile electronically programmable reversible variable resistance device
Abstract
A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.
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Ramesham, Rajeshuni, Thakoor, Sarita, Daud, Taher, Thakoor, Aniklumar P.. 1989-06-13. Solid-state non-volatile electronically programmable reversible variable resistance device. https://ntrs.nasa.gov/citations/20080012331
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