NASA NTRS · 20100006888
High-performance field effect transistors with self-assembled nanodielectrics
Abstract
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.
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Marks, Tobin J., Ye, Peide, Facchetti, Antonio, Lu, Gang, Lin, Han Chung. 2009-12-15. High-performance field effect transistors with self-assembled nanodielectrics. https://ntrs.nasa.gov/citations/20100006888
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