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NASA NTRS · 20150023547

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

Chen, Dakai·Wilcox, Edward·Berg, Melanie·Kim, Hak·Phan, Anthony·Figueiredo, Marco·Seidleck, Christina·LaBel, Kenneth
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Abstract

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

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Chen, Dakai, Wilcox, Edward, Berg, Melanie, Kim, Hak, Phan, Anthony, Figueiredo, Marco, Seidleck, Christina, LaBel, Kenneth. 2015-07-13. Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM. https://ntrs.nasa.gov/citations/20150023547

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