Engineering topics
Publications and source records attributed to LaBel, Kenneth.
We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data to improve system survivability prediction.
We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM).
It has been shown that, when exposed to radiation environments, each Field Programmable Gate Array (FPGA) device has unique error signatures. Subsequently, fail-safe and mitigation strategies will differ per FPGA type. In this session several design approaches for safe systems will be presented. It will also explore the benefits and limitations of several mitigation techniques. The intention of the presentation is to provide information regarding FPGA types, their susceptibilities, and proven fail-safe strategies; so that users can select appropriate mitigation and perform the required trade for system insertion. The presentation will describe three types of FPGA devices and their susceptibilities in radiation environments.
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4 field programmable gate array (FPGA).
This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing, mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.
This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing. Mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.
If a system is required to be protected using triple modular redundancy (TMR), improper insertion can jeopardize the reliability and security of the system. Due to the complexity of the verification process and the complexity of digital designs, there are currently no available techniques that can provide complete and reliable confirmation of TMR insertion. We propose a method for TMR insertion verification that satisfies the process for reliable and trusted systems.
It has been shown that, when exposed to radiation environments, each Field Programmable Gate Array (FPGA) device has unique error signatures. Subsequently, fail-safe and mitigation strategies will differ per FPGA type. In this session several design approaches for safe systems will be presented. It will also explore the benefits and limitations of several mitigation techniques. The intention of the presentation is to provide information regarding FPGA types, their susceptibilities, and proven fail-safe strategies; so that users can select appropriate mitigation and perform the required trade for system insertion. The presentation will describe three types of FPGA devices and their susceptibilities in radiation environments.
We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.
This presentation is an introduction to Field Programmable Gate Array (FPGA) devices and the challenges of critical application including: safety, reliability, availability, recoverability, and security.
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFI.
An informative session regarding SRAM FPGA basics. Presenting a framework for fault injection techniques applied to Xilinx Field Programmable Gate Arrays (FPGAs). Introduce an overlooked time component that illustrates fault injection is impractical for most real designs as a stand-alone characterization tool. Demonstrate procedures that benefit from fault injection error analysis.
We show examples of single event functional interrupt and destructive failure in modern POL devices. The increasing complexity and diversity of the design and process introduce hard SEE modes that are triggered by various mechanisms.
We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. We discuss the implications of the results for radiation hardness assurance
We present a novel method of FPGA TID testing that measures propagation delay between flip-flops operating at maximum speed. Measurement is performed on-chip at-speed and provides a key design metric when building system-critical synchronous designs.