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NASA NTRS · 20170003040

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

Abstract

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

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Chen, Liang-yu, Neudeck, Philip G., Spry, David J., Beheim, Glenn M., Hunter, Gary W.. 2016-07-29. 500 C Electronic Packaging and Dielectric Materials for High Temperature Applications. https://ntrs.nasa.gov/citations/20170003040

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Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package

A high temperature co-fired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550 C, and demonstrated improved dielectric performance at high temperatures compared with the 96% alumina substrate that we used before, suggesting its potential use for high temperature packaging applications. This paper introduces a prototype 32-I/O (input/output) HTCC alumina package with platinum conductor for 500 C low-power silicon carbide (SiC) integrated circuits. The design and electrical performance of this package including parasitic capacitance and parallel conductance of neighboring I/Os from 100 Hz to 1 MHz in a temperature range from room temperature to 550 C are discussed in detail. The parasitic capacitance and parallel conductance of this package in the entire frequency and temperature ranges measured does not exceed 1.5 pF and 0.05 microsiemens, respectively. SiC integrated circuits using this package and compatible printed circuit board have been successfully tested at 500 C for over 3736 hours continuously, and at 700 C for over 140 hours. Some test examples of SiC integrated circuits with this packaging system are presented. This package is the key to prolonged T greater than or equal to 500 C operational testing of the new generation of SiC high temperature integrated circuits and other devices currently under development at NASA Glenn Research Center.

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