NASA NTRS · 20180001356
Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method
Abstract
This paper presents two-photon absorption test results on an engineering single-event burnout- (SEB-) sensitive power MOSFET to verify that the energy deposition/charge ionization in the highly-doped substrate does not contribute to SEB. It is shown that for a vertical power MOSFET, the SEB sensitive volume is the lightly doped epitaxial layer; the most sensitive region is under the polysllicon gate.
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Lauenstein, Jean-Marie, Liu, Sandra, Titus, Jeffrey L., McMorrow, Dale, Casey, Megan C., Buchner, Stephen P., Warner, Jeffrey, Phan, Anthony M., Topper, Alyson D., Kim, Hak S., LaBel, Kenneth A., Yang, Becky, Zafrani, Max, Sherman, Phillip. 2011-07-26. Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method. https://ntrs.nasa.gov/citations/20180001356
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