NASA NTRS · 20180002439
Reliability Concerns for Flying SiC Power MOSFETs in Space
Abstract
SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
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Galloway, K. F., Witulski, A. F., Schrimpf, R. D., Sternberg, A. L., Ball, D. R., Javanainen, A., Reed, R. A., Sierawski, B. D., Lauenstein, J-M. 2018-04-16. Reliability Concerns for Flying SiC Power MOSFETs in Space. https://ntrs.nasa.gov/citations/20180002439
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