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Reed, R. A.

Publications and source records attributed to Reed, R. A..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
NASA NTRS2018

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Single-event burnout↗
NASA NTRS2018

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

silicon carbide↗
NASA NTRS2009

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

A 1 GeV/u Fe-56 Ion beam allows for true 90 deg. tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the galactic cosmic ray (GCR) flux-energy peak.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

Pellish, Jonathan A.↗
NASA NTRS2009

Simulation of SRAM SEU Sensitivity at Reduced Operating Temperatures

A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations of an SRAM cell. Results using newly calibrated TCAD cold temperature substrate mobility models, and BSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction in SEU threshold for the range of temperatures simulated.

Sanathanamurthy, S.↗
NASA NTRS2008

Analysis of Single-Event Latchup Cross Section in 65 nm SRAMs

Single event latchup (SEL) in a 65 nm CMOS SRAM technology is observed and sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. The significance of these results are discussed and the foundation for a predictive model of SEL is laid out for use with the MRED tool.

Hutson, J. M.↗
NASA NTRS2008

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.

Black, J. D.↗
NASA NTRS2007

Simulation of SEU Cross-sections using MRED under Conditions of Limited Device Information

This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using the membrane electrode assembly (MEA) resistance and electrode diffusion (MRED) tool using "Best guess" assumptions about the process and geometry, and direct ionization, low-energy beam test results. This work will also simulate SEU cross-sections including angular and high energy responses and compare the simulated results with beam test data for the validation of the model. Using MRED, we produced a reasonably accurate upset response model of a low-critical charge SRAM without detailed information about the circuit, device geometry, or fabrication process

Lauenstein, J. M.↗
NASA NTRS2007

Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS2006

Comparison of Measured Leakage Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS2000

A Compendium of Recent Optocoupler Radiation Test Data

We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Label, K. A.↗
NASA NTRS1998

Current Radiation Issues for Programmable Elements and Devices

State of the an programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper will discuss that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and have resultant system impacts in (1) reliability of the unprogrammed, biased antifuse for heavy ions (rupture), (2) logic upset manifesting itself as clock upset, and (3) configuration upset. General radiation characteristics of advanced technologies are examined and manufacturers' modifications to their COTS-based and their impact on future programmable devices will be analyzed.

Katz, R.↗