Reliability Concerns for Flying SiC Power MOSFETs in Space

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

NASA NTRS · 20180002440

Reliability Concerns for Flying SiC Power MOSFETs in Space

Galloway, K. F.·Witulski, A. F.·Schrimpf, R. D.·Sternberg, A. L.·Ball, D. R.·Javanainen, A.·Reed, R. A.·Sierawski, B. D.·Lauenstein, J.-M.

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Abstract

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

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Galloway, K. F., Witulski, A. F., Schrimpf, R. D., Sternberg, A. L., Ball, D. R., Javanainen, A., Reed, R. A., Sierawski, B. D., Lauenstein, J.-M.. 2018-04-16. Reliability Concerns for Flying SiC Power MOSFETs in Space. https://ntrs.nasa.gov/citations/20180002440

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