NASA NTRS · 20180003640
Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips
Abstract
A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).
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Spry, David J., Neudeck, Philip G.. 2018-05-22. Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips. https://ntrs.nasa.gov/citations/20180003640
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