Search NASA⌕ Search
Home/Archive/NASA NTRS

NASA NTRS · 20190001289

ISSI IS46DR16640B-25DBA25 DDR2 SDRAM Total Ionizing Dose Characterization Test Report

Wyrwas, Edward J.·Kim, Hak S.·Campola, Michael J.
View original source ↗Export metadata ↓

Abstract

The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation for total dose response. This test’s purpose is to evaluate and compare lot date codes for sensitivity. In the test, the device is exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits or addresses, and overall chip and die health are investigated to determine which lot is more robust. These parameters directly affect the functionality of the memory within a system and may determine thresholds necessary to mitigate failure.

Explore related subjects

Total Ionizing Dose (TID)NASA Electronic Parts and Packaging (NEPP) ProgramDouble Data Rate (DDR)

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Wyrwas, Edward J., Kim, Hak S., Campola, Michael J.. 2019-03-04. ISSI IS46DR16640B-25DBA25 DDR2 SDRAM Total Ionizing Dose Characterization Test Report. https://ntrs.nasa.gov/citations/20190001289

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

NASA NTRS2022

Si5345, SY88422L, LT3482, and MSK130 components Total Ionizing Dose Test Report

The purpose of this test was to characterize the SI-5345, SY88422L, LT3482 and MSK130 parameter degradation for total dose response. The components are associated with REAG ID #21-024. In the test, each device was exposed to high dose rate (HDR) irradiation using gamma radiation. Device parameters such as leakage currents, timing, and overall chip health were investigated. These devices were tested for an interstellar mission on a trajectory between 0.9 AU and 5.3 AU with a 2.5-year mission, yielding an expected overall dose of 29 krad(Si)behind 1 mm of aluminum shielding (at 95% confidence; environment and dose determined through SPENVIS). This test report gives an initial look at candidate parts. Extremely small sample sizes (only 1 or 2 devices tested) do not allow consideration of part-to-part variability. High dose rates were used despite LT3482 and MSK130 having potential enhanced low dose rate sensitivity (ELDRS). Care should be taken in interpreting results given these limitations.

Total Ionizing Dose (TID)↗
NASA NTRS2020

U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.

Total Ionizing Dose (TID)↗