Schottky Diode Derating for Survivability in a Heavy Ion Environment

Megan C. Casey; Jean-Marie Lauenstein; Raymond L Ladbury; Edward P. Wilcox; Alyson D. Topper; Kenneth A Label

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NASA NTRS · 20205004142

Schottky Diode Derating for Survivability in a Heavy Ion Environment

Megan C. Casey·Jean-Marie Lauenstein·Raymond L Ladbury·Edward P. Wilcox·Alyson D. Topper·Kenneth A Label

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Abstract

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

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Radiation effects single-event effects Schottky diodes single-event burnout single-event charge collection diodes heavy ion testing heavy ions defects radiation effects in devices radiation hardness assurance radiation hardness assurance testing semiconductor device radiation effects silicon

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Megan C. Casey, Jean-Marie Lauenstein, Raymond L Ladbury, Edward P. Wilcox, Alyson D. Topper, Kenneth A Label. 2015-12-17. Schottky Diode Derating for Survivability in a Heavy Ion Environment. https://ntrs.nasa.gov/citations/20205004142

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