Engineering topics
Publications and source records attributed to Kenneth A Label.
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
In this presentation, the driving factors changing the world of single-event effects (SEE) testing will be discussed. This includes both semiconductor technological advances and morphing space system philosophies. Considerations for meeting these new challenges will then follow.
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.
In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.