Processing Choices for Achieving Long Term IC Operation at 500 °C

D Spry; P Neudeck

NASA NTRS · 20210015155

Processing Choices for Achieving Long Term IC Operation at 500 °C

Abstract

The prospects for beneficial infusion of integrated circuits (ICs) into previously inaccessible extreme-temperature application environments has increased with recent NASA Glenn demonstrations of 4H-SiC Junction Field Effect Transistor & Resistor (JFET-R) chips functioning for over a year at 500 °C in air ambient. This paper focuses on fabrication process choices believed key to demonstrated 500 °C durability that must be considered when porting this uniquely durable IC capability into commercial foundry manufacturing.

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D Spry, P Neudeck. Processing Choices for Achieving Long Term IC Operation at 500 °C. https://ntrs.nasa.gov/citations/20210015155

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